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Proceedings Paper

Theory of momentum orientation relaxation in semiconductors
Author(s): Rolf H. Binder; Hilding Sigurd Koehler; Nai-Hang Kwong; Michael Bonitz
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Paper Abstract

We present numerical results for charge-carrier relaxation processes by carrier-carrier scattering in various semiconductor structures. Common to all examples is the aspect of anisotropy. Our results are based on a generalized quantum Boltzmann equation. Specifically, we solve the Kadanoff-Bayn equations for the relevant two-time Green's function. The systems under consideration are bulk GaAs with anisotropically photo-excited electrons and hexagonal CdS.

Paper Details

Date Published: 6 June 1997
PDF: 6 pages
Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275619
Show Author Affiliations
Rolf H. Binder, Optical Sciences Ctr./Univ. of Arizona (United States)
Hilding Sigurd Koehler, Optical Sciences Ctr./Univ. of Arizona (United States)
Nai-Hang Kwong, Optical Sciences Ctr./Univ. of Arizona (United States)
Michael Bonitz, Univ. Rostock (Germany)


Published in SPIE Proceedings Vol. 2994:
Physics and Simulation of Optoelectronic Devices V
Marek Osinski; Weng W. Chow, Editor(s)

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