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Proceedings Paper

Theoretical analysis of optical gain and exciton effect in GaN/AlGaN quantum wells
Author(s): Takeshi Uenoyama; Masakatsu Suzuki
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Paper Abstract

Optical gains of wurtzite GaN/AlGaN quantum wells have been studied by a first-principles calculation and the k.p method. Most of the parameters in the k.p method were determined by fitting the band structures to the first- principles calculation. Owing to the small spin-orbit splitting energies and the strong electronegativity, the large hole density of states causes the higher threshold current density of the wurtzite GaN/AlGaN quantum well lasers. Then, we have proposed a new mechanism of the optical gain for laser diodes, using a localized level and the excitonic effects. The excitonic effects enhance an oscillator strength of the optical transition. When a localized level is exist in the band-gap, the optical gain between the localized state and one of the band edge states is produced with the very small carrier density. This optical gain is enhanced by the excitonic effect a the band edges and it might show a possibility of very low threshold current density for wide-gap laser diodes.

Paper Details

Date Published: 6 June 1997
PDF: 8 pages
Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275617
Show Author Affiliations
Takeshi Uenoyama, Matsushita Electric Industrial Co., Ltd. (Japan)
Masakatsu Suzuki, Matsushita Electric Industrial Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 2994:
Physics and Simulation of Optoelectronic Devices V
Marek Osinski; Weng W. Chow, Editor(s)

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