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Proceedings Paper

Space-time simulation of high-brightness semiconductor lasers
Author(s): Jerome V. Moloney; Robert A. Indik; Cun-Zheng Ning; Aidan Egan
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Paper Abstract

A full scale simulation model, that resolves the spatio- temporal behavior of competing longitudinal mode and transverse filamentation instabilities in a wide variety of high brightness edge emitter geometries, is presented. The model is highly modular and is built on a first principles microscopic physics basis. The nonlinear optical response function of the semiconductor, computed for specific QW structures, covers the low-density absorption to high density gain saturation regimes. As an illustration of its robustness as a laser design tool, the model is applied to a monolithically integrated flared amplifier master oscillator power amplifier semiconductor laser.

Paper Details

Date Published: 6 June 1997
PDF: 10 pages
Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275607
Show Author Affiliations
Jerome V. Moloney, Univ. of Arizona (United States)
Robert A. Indik, Univ. of Arizona (United States)
Cun-Zheng Ning, Univ. of Arizona (United States)
Aidan Egan, Univ. of Arizona (United States)


Published in SPIE Proceedings Vol. 2994:
Physics and Simulation of Optoelectronic Devices V
Marek Osinski; Weng W. Chow, Editor(s)

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