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Proceedings Paper

Epitaxial structure dependence of the linewidth enhancement factor in GaAs and InGaAs quantum well lasers
Author(s): Jonathan Stohs; David J. Gallant; David J. Bossert; Steven R. J. Brueck
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Paper Abstract

The linewidth enhancement factor, (alpha) , plays a key role in our ability to obtain spatially coherent output from high-power semiconductor lasers and amplifiers. To obtain (alpha) values, modal gain and carrier-induced refractive index change have been measured in broad-area quantum well epitaxial structures with various well depths, widths, and compositions as functions of current density.

Paper Details

Date Published: 6 June 1997
PDF: 10 pages
Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275604
Show Author Affiliations
Jonathan Stohs, Univ. of New Mexico (United States)
David J. Gallant, Rocketdyne Technical Services (United States)
David J. Bossert, Air Force Phillips Lab. (United States)
Steven R. J. Brueck, Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 2994:
Physics and Simulation of Optoelectronic Devices V
Marek Osinski; Weng W. Chow, Editor(s)

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