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Proceedings Paper

Magnetoluminescence characterization of lattice matched n-type InGaAs/InAlAs/InP MQWs on InP
Author(s): Eric D. Jones; Nobuo Kotera; Tomoyoshi Mishima; Hisato Nakamura; Noboru Miura; Chris P. Tigges
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Paper Abstract

A knowledge of the energy-band energies and masses are important parameters for the design of semiconductor lasers and light-emitting diodes. We present results of a magnetoluminescence study on n-type InGaAs/InAlAs multiple quantum wells lattice matched to InP. From an analysis of low-temperature magnetoluminescence data, a simultaneous measurement of the in-plane conduction and valence-band masses is made. We find, assuming parabolic bands, that the conduction and valence-band masses are respectively mc approximately equals 0.069 m0 and mv approximately equals 0.061 m0, where m0 is the free electron mass. Fitting a nonparabolic conduction-band dispersion curve to the data yields a zone- center mass mc approximately equals 0.056 m0 and mv approximately 0.102 m0.

Paper Details

Date Published: 6 June 1997
PDF: 8 pages
Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275595
Show Author Affiliations
Eric D. Jones, Sandia National Labs. (United States)
Nobuo Kotera, Kyushu Institute of Technology (Japan)
Tomoyoshi Mishima, Hitachi Ltd. (Japan)
Hisato Nakamura, Hitachi Ltd. (Japan)
Noboru Miura, Univ. of Tokyo (Japan)
Chris P. Tigges, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 2994:
Physics and Simulation of Optoelectronic Devices V
Marek Osinski; Weng W. Chow, Editor(s)

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