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Proceedings Paper

Ultrabroad-bandwidth in-line MQW GaAs/GaAlAs optical intensity modulator
Author(s): Milson Tadeu Camargo Silva; Carlos Alberto de Francisco
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Paper Abstract

The design and performance of three wavelength-selective optical intensity modulators integrated in-line operating near 860 nm with 8 angstrom separation based on GaAs/GaAlAs multiquantum well is reported. The device utilizes an exchange Bragg resonator embedded in a dissimilar coupled- waveguide structure in its design. Due to its unique design wavelength selectivity is obtained and the modulator presents a modulation region only 16.14 micrometers long yielding an ultrabroad bandwidth of 250 GHz for a waveguide 2.0 micrometers wide at a drive voltage of 3.0 V. In addition, the device exhibits high extinction ratio, 20 dB, low insertion loss, 2.0 dB, small size, 495 micrometers , tuning capability of 2.8 angstrom, which is 35 percent of the wavelength separation among channels, also at 3.0 V, and it is chirp-free. The in- line modulators can also be integrated with lasers, photodetectors, semiconductor optical amplifiers, etc.

Paper Details

Date Published: 6 June 1997
PDF: 12 pages
Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275591
Show Author Affiliations
Milson Tadeu Camargo Silva, Univ. de Sao Paulo (Brazil)
Carlos Alberto de Francisco, Univ. de Sao Paulo (Brazil)


Published in SPIE Proceedings Vol. 2994:
Physics and Simulation of Optoelectronic Devices V
Marek Osinski; Weng W. Chow, Editor(s)

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