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Proceedings Paper

(BAlGa)N quaternary system and epitaxial growth on (0001)6H-SiC substrate by low-pressure MO-VPE
Author(s): Hideo Kawanishi; Makiko Haruyama; Toshi Shirai; Yasuharu Suematsu
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Paper Abstract

GaN and their alloy systems have a potential for the application of optical devices operating in blue and ultraviolet spectral region. In this paper, the possibility of (BAlGa)N quaternary system lattice matched to (0001) 6H- SiC substrate is described for ultraviolet emitters in the view of bandgap energy, lattice-matching to substrates. The estimated bandgap energy of quaternary system is ranging from 3.9 eV to 6.1 eV. It is also discussed that the crystal growth of (BAlGa)N systems using metalorganic vapor phase epitaxy. The quaternary system lattice-matched to (0001) 6H- SiC have an advantage for the laser application operating in ultraviolet spectral region.

Paper Details

Date Published: 6 June 1997
PDF: 8 pages
Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275585
Show Author Affiliations
Hideo Kawanishi, Kohgakuin Univ. (Japan)
Makiko Haruyama, Kohgakuin Univ. (Japan)
Toshi Shirai, Kohgakuin Univ. (Japan)
Yasuharu Suematsu, National Institute for Advanced Interdisciplinary Research (Japan)


Published in SPIE Proceedings Vol. 2994:
Physics and Simulation of Optoelectronic Devices V
Marek Osinski; Weng W. Chow, Editor(s)

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