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Proceedings Paper

Calculation of microcavity VCSEL field modes using a doubly iterative weighted index method
Author(s): Michael J. Noble; John P. Loehr; James A. Lott
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Paper Abstract

We generalize the weighted index method for analysis of modal structure in various devices, including vertical cavity surface emitting lasers. Our model uses a doubly iterative process to calculate the bound modes for any dielectric device with an azimuthally symmetric geometry. In order to calculate the modes we assume a separable form for the electric and magnetic vector potentials. The scalar wave equation is then solved for the axial components of electric and magnetic vector potentials. Assuming a functional form of Az equals F((rho) )G(z) and Fz equals P((rho) )Q(z) we form coupled differential equations between F((rho) ) and G(z). These equations are then iteratively solved using the coupled boundary conditions for Az and Fz. Convergence by tracking the change in the eigenfrequency for the radial and axial eigenvalue equations. Our method allows rapid calculation, compared to an analogous finite element approach, and will handle any azimuthally-symmetric geometry with piecewise-constant indices of refraction. This model is particularly well suited to the calculation of bound modes in microcavity and oxidized structures where field confinement effects can be very important. The model can also, in principle, be adapted to obtain radiative modes, and should provide a valuable tool to analyze field behavior and quantum optics effects in microcavity devices.

Paper Details

Date Published: 6 June 1997
PDF: 8 pages
Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275571
Show Author Affiliations
Michael J. Noble, Air Force Insitute of Technology (United States)
John P. Loehr, Air Force Wright Lab. (United States)
James A. Lott, Air Force Institute of Technology (United States)


Published in SPIE Proceedings Vol. 2994:
Physics and Simulation of Optoelectronic Devices V
Marek Osinski; Weng W. Chow, Editor(s)

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