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Proceedings Paper

Present status of short-wavelength group-III nitride-based laser diodes
Author(s): Shuji Nakamura
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Paper Abstract

The continuous-wave (CW) operation of InGaN multi-quantum- well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. Longitudinal modes with a mode separation of 0.042 nm were observed under CW operation at RT. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The peak wavelength also showed mode hopping toward higher energy with increasing operating current. Each single-mode laser emission was located at a peak of each periodic subband emission. These periodic subband emissions probably result from the transitions between the subband energy levels of the InGaN quantum dots formed from In-rich regions in the InGaN well layers. The carrier lifetime and the threshold carrier density were estimated to be 10 ns and 2 X 1020/cm3, respectively. The beam full width at half- power values for the parallel and the perpendicular near- field patterns were 1.6 micrometers and 0.8 micrometers , respectively. Those of the far-field patterns were 6.8 degrees and 33.6 degrees, respectively.

Paper Details

Date Published: 6 June 1997
PDF: 11 pages
Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275566
Show Author Affiliations
Shuji Nakamura, Nichia Chemical Industries, Ltd. (United States)

Published in SPIE Proceedings Vol. 2994:
Physics and Simulation of Optoelectronic Devices V
Marek Osinski; Weng W. Chow, Editor(s)

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