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Proceedings Paper

Beryllium-containing materials for II-VI laser diodes
Author(s): Andreas Waag; Th. Litz; Frank Fischer; H.-J. Lugauer; Robert L. Gunshor; Gottfried Landwehr
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Paper Abstract

Beryllium containing ZnSe-based compound semiconductors introduce substantial additional degrees of freedom for the design of wide gap II-VI heterostructures. Interesting aspects are the lattice matching of BeTe with its high lying valence band and high p-type dopability for the growth of graded gap contacts capable of carrying high current densities, as well as the expected strengthening of quaternary beryllium compounds like BeMgZnSe as compared to the II-VI materials used on the basis of ZnMgSSe. They have a large covalency and therefore large bond energy. The covalency of BeSe e.g. is expected to be as high as the one of GaN. The fabrication of light emitting devices like LEDs and laser diodes is reported.

Paper Details

Date Published: 6 June 1997
PDF: 11 pages
Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275564
Show Author Affiliations
Andreas Waag, Purdue Univ. (Germany)
Th. Litz, Univ. Wuerzburg (Germany)
Frank Fischer, Univ. Wuerzburg (Germany)
H.-J. Lugauer, Univ. Wuerzburg (Germany)
Robert L. Gunshor, Purdue Univ. (United States)
Gottfried Landwehr, Univ. Wuerzburg (Germany)

Published in SPIE Proceedings Vol. 2994:
Physics and Simulation of Optoelectronic Devices V
Marek Osinski; Weng W. Chow, Editor(s)

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