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Proceedings Paper

Coupling effect in a vertical-cavity surface-emitting laser structure observed by photoreflectance spectroscopy
Author(s): P. D. Berger; C. Bru-Chevallier; Taha Benyattou; Gerard Guillot; Philippe Grosse; Laurent Couturier; Andre L. Chenevas-Paule
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Paper Abstract

In this work we describe the possibility of photoreflectance spectroscopy to study physical effects in vertical cavity surface emitting laser structures. Photoreflectance spectroscopy has proved to be a powerful technique for non- destructive characterization of such structures prior to a full process.OUr structure is based on the GaAlAs system and is grown by GSMBE technique. The (lambda) cavity includes three 45 angstrom quantum wells. The measure of energetic position of both quantum well emission and Fabry-Perot cavity mode can be achieved by this spectrometry technique. We study here the evolution of the transition energies as a function of temperature: it exhibits an anticrossing effect when both transition arise at about the same energy. This is the proof of a coupling effect between the two oscillators which can no more be distinguished. The reflectivity shows a Rabi splitting effect at the same temperature. These phenomena are explained using a modeling of the structure reflectivity with the Abeles formalism. We take the quantum confined Stark effect into account for the active layer inside the Fabry-Perot cavity. As we consider the electric field value in the cavity, we can then deduce the photoreflectance signal. We demonstrate here the advantages of photoreflectance to observe coupling effects in microcavities.

Paper Details

Date Published: 6 June 1997
PDF: 8 pages
Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275562
Show Author Affiliations
P. D. Berger, INSA de Lyon (France)
C. Bru-Chevallier, INSA de Lyon (France)
Taha Benyattou, INSA de Lyon (France)
Gerard Guillot, INSA de Lyon (France)
Philippe Grosse, LETI/CEA-Technologies Avancees (France)
Laurent Couturier, LETI/CEA-Technologies Avancees (France)
Andre L. Chenevas-Paule, LETI/CEA-Technologies Avancees (France)


Published in SPIE Proceedings Vol. 2994:
Physics and Simulation of Optoelectronic Devices V
Marek Osinski; Weng W. Chow, Editor(s)

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