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Proceedings Paper

Comparison of models for calculation of optical gain in gallium nitride
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Paper Abstract

We discuss theoretical predictions for the gain spectra in GaN-based lasers from the point of view of adequate modeling, aimed at optimization of the laser structure and cavity parameters. The Coulomb enhancement effect is included, and it is shown that it leads to an increase of both the gain cross-section and the threshold current in edge-emitting lasers, due to shortening of carrier lifetime. The minimum threshold current density in such lasers with bulk active regions is estimated to be between 2 and 4 kA/cm2 at room temperature.

Paper Details

Date Published: 6 June 1997
PDF: 12 pages
Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275555
Show Author Affiliations
Vladimir A. Smagley, Univ. of New Mexico (United States)
Petr Georgievich Eliseev, Univ. of New Mexico (United States)
Marek Osinski, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 2994:
Physics and Simulation of Optoelectronic Devices V
Marek Osinski; Weng W. Chow, Editor(s)

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