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Proceedings Paper

ZnMgSSe-based laser diodes
Author(s): H. Noguchi; S. Tomiya; Shun-Lien Chuang; Akira Ishibashi
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Paper Abstract

We summarize here recent progress in II-VI blue-green semiconductor laser diodes (LDs). ZnMgSSe quaternary alloy, a promising material for the cladding layer, has enabled us to realize a long lifetime exceeding 100h with improvements in the active layer, the electrode, and growth techniques. Studies of degradation have revealed that II-VI LDs degrade not catastrophically, but gradually with enhancement by electron-hole recombination at defect sites.

Paper Details

Date Published: 6 June 1997
PDF: 10 pages
Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275553
Show Author Affiliations
H. Noguchi, Sony Corporation Research Ctr. (Japan)
S. Tomiya, Sony Corporation Research Ctr. (Japan)
Shun-Lien Chuang, Univ. of Illinois/Urbana-Champaign (United States)
Akira Ishibashi, Sony Corporation Research Ctr. (Japan)


Published in SPIE Proceedings Vol. 2994:
Physics and Simulation of Optoelectronic Devices V
Marek Osinski; Weng W. Chow, Editor(s)

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