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Proceedings Paper

Distribution of impurities in the surface layers of KDP and KD*P single crystals after their mechanical treatment
Author(s): L. V. Atroschenko; Abraham B. Blank; E. S. Zolotovitskaya; N. V. Khodeeva; I. V. Pulyayeva; L. V. Glushkova; T. N. Trubayeva; E. D. Kovtun
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Paper Abstract

The detailed investigation of the composition and the impurity concentration in surface layers of KDP and KD.P single crystals was carried out. The relation of surface laser damage threshold to bulk one in these crystals was not more than 40 percent. The content of impurities - Al, Mg, Ca, Fe, Si - was determined by x-ray photoelectron and atomic emission spectroscopy and carbon content by coulonometry. The depth profiling curves of the samples subjected to different kinds of mechanical treatments were obtained. It was found our that the penetration depth of impurities depends on the kind of treatment and abrasives. The deviation of the component composition in surface layers from the stoichiometric ratio in the bulk was also established. It was shown that the impurities included in the crystal lattice of KDP and KD.P are responsible for the active absorption of the laser radiation and for the decrease of the radiation threshold power when the crystal is not yet damaged.

Paper Details

Date Published: 13 May 1997
PDF: 1 pages
Proc. SPIE 2966, Laser-Induced Damage in Optical Materials: 1996, (13 May 1997); doi: 10.1117/12.274282
Show Author Affiliations
L. V. Atroschenko, Institute for Single Crystals (Ukraine)
Abraham B. Blank, Institute for Single Crystals (Ukraine)
E. S. Zolotovitskaya, Institute for Single Crystals (Ukraine)
N. V. Khodeeva, Institute for Single Crystals (Ukraine)
I. V. Pulyayeva, Institute for Single Crystals (Ukraine)
L. V. Glushkova, Institute for Single Crystals (Ukraine)
T. N. Trubayeva, Institute for Single Crystals (Ukraine)
E. D. Kovtun, Institute for Single Crystals (Ukraine)


Published in SPIE Proceedings Vol. 2966:
Laser-Induced Damage in Optical Materials: 1996
Harold E. Bennett; Arthur H. Guenther; Mark R. Kozlowski; Brian Emerson Newnam; M. J. Soileau, Editor(s)

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