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Proceedings Paper

Ultrafast laser-induced structural changes in semiconductors
Author(s): Eric Mazur; Eli N. Glezer; Li Huang; John Paul Callan
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Paper Abstract

We present experimentally determined values of the dielectric function of GaAs following femtosecond laser excitation. The data at photon energies of 2.2 and 4.4 eV show that the response of the dielectric function tot he excitation is dominate by changes in the electronic band structure and not by the optical susceptibility of the excited free carriers. The behavior of the dielectric function indicates a drop in the average bonding-antibonding splitting of GaAs following the excitation, which leads to a collapse of the band gap. The changes in the electronic band structure results from a combination of electronic screening, many-body effects, and structural deformation of the lattice caused by the destabilization of the covalent bonds. Broadband measurement of the dielectric function over the range 1.5-3.5 eV reveals ultrafast laser-induced heating at low fluence, disordering at intermediate fluence, and an ultrafast semiconductor-to-metal transition at high fluence.

Paper Details

Date Published: 13 May 1997
PDF: 14 pages
Proc. SPIE 2966, Laser-Induced Damage in Optical Materials: 1996, (13 May 1997); doi: 10.1117/12.274249
Show Author Affiliations
Eric Mazur, Harvard Univ. (United States)
Eli N. Glezer, Harvard Univ. (United States)
Li Huang, Harvard Univ. (United States)
John Paul Callan, Harvard Univ. (United States)


Published in SPIE Proceedings Vol. 2966:
Laser-Induced Damage in Optical Materials: 1996
Harold E. Bennett; Arthur H. Guenther; Mark R. Kozlowski; Brian Emerson Newnam; M. J. Soileau, Editor(s)

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