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Proceedings Paper

Nano absorbing centers: a key point in the laser damage of thin films
Author(s): Jean DiJon; T. Poiroux; C. Desrumaux
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Paper Abstract

In order to investigate a possible origin of absorbing centers responsible for laser damage of thin films in the UV, the laser-induced damage threshold of metal implanted bare SiO2 substrates is studied. Post-implantation thermal annealing of the samples is associated with a large change in the laser damage morphology, a decrease of the absorption at 355 nm as well as a decrease in the measured threshold values compared with non-annealed samples. All these phenomena are understood considering that nanoclusters of metals are produced during annealing. Such clustering is very likely to occur due to the thermodynamical properties of the metal dielectric system. The same behavior observed on thin films enables the proposition to be made that the same kind of clusters exist on thin films before any post- deposition process.

Paper Details

Date Published: 13 May 1997
PDF: 11 pages
Proc. SPIE 2966, Laser-Induced Damage in Optical Materials: 1996, (13 May 1997); doi: 10.1117/12.274229
Show Author Affiliations
Jean DiJon, LETI/CEA (France)
T. Poiroux, LETI/CEA (France)
C. Desrumaux, LETI/CEA (France)


Published in SPIE Proceedings Vol. 2966:
Laser-Induced Damage in Optical Materials: 1996
Harold E. Bennett; Arthur H. Guenther; Mark R. Kozlowski; Brian Emerson Newnam; M. J. Soileau, Editor(s)

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