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Proceedings Paper

Epitaxial SiGeC photodiode grown on Si substrate with response in the 1.3- to 1.55-um wavelength range
Author(s): Fred F.Y. Huang; Michael Chu; Kang Lung Wang; Paul D. Trinh; Bahram Jalali
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Paper Abstract

We present results on epitaxial SiGeC alloy layers grown on Si substrates for optical receiver applications in the 1.3 - 1.55 micrometers wavelength range. The active absorbing layer of the pin photodiodes consist of a strained SiGeC alloy. The SiGeC alloy has a Ge content of 55% and 40%, with a thickness of 80 nm and 200 nm, respectively. TEM images review a high quality epitaxial film with a sharp interface between the SiGeC layer and the Si substrate. The devices show a breakdown voltage of about 6 V. Both surface normal and waveguide structures have been fabricated, and optical response extending to 1.55 micrometers has been demonstrated. At normal incidence the external quantum efficiency of the device with a 55%-Ge content is close to 1% at 1.3 micrometers . For a waveguide structure of 400-micrometers length the external quantum efficiency is 8% at 1.3 micrometers , and limited by the fiber coupling coefficient.

Paper Details

Date Published: 25 April 1997
PDF: 6 pages
Proc. SPIE 3007, Silicon-Based Monolithic and Hybrid Optoelectronic Devices, (25 April 1997); doi: 10.1117/12.273858
Show Author Affiliations
Fred F.Y. Huang, Univ. of California/Los Angeles (United States)
Michael Chu, Univ. of California/Los Angeles (United States)
Kang Lung Wang, Univ. of California/Los Angeles (United States)
Paul D. Trinh, Univ. of California/Los Angeles (United States)
Bahram Jalali, Univ. of California/Los Angeles (United States)


Published in SPIE Proceedings Vol. 3007:
Silicon-Based Monolithic and Hybrid Optoelectronic Devices
Derek C. Houghton; Bahram Jalali, Editor(s)

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