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Proceedings Paper

Lattice modification and luminescence of dry-etched Si-Si1-xGex quantum dots
Author(s): Yin-Sheng Tang; Simon E. Hicks; Chris D. W. Wilkinson; C.M. Sotomayor Torres; W. X. Ni; Jens Birch; J. B. Joelsson; Goeran V. Hansson; A. Kvick; K. L. Wang
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Paper Abstract

Arrays of 40 - 50 nm quantum dots were fabricated from Si- Si1-xGex single quantum well and superlattice structures grown by molecular beam epitaxy. The dots showing strong luminescence were studied by synchrotron source x-ray diffraction. Some of the dots were coated with SiNx films containing different build-in stresses. It was found that the luminescence intensity depends strongly on the amount of stress in the SiNx coating, being strongest when the stress was close to zero. A strain symmetrization process occurred in the bright dots. Although an exact physical origin is not yet available, it is exciting that these quantum dot diodes work at room temperature and that the whole fabrication procedure is compatible with Si- technology.

Paper Details

Date Published: 25 April 1997
PDF: 8 pages
Proc. SPIE 3007, Silicon-Based Monolithic and Hybrid Optoelectronic Devices, (25 April 1997); doi: 10.1117/12.273851
Show Author Affiliations
Yin-Sheng Tang, Univ. of Glasgow (United Kingdom)
Univ. of California/Los Angeles (United States)
Simon E. Hicks, Univ. of Glasgow (United Kingdom)
Chris D. W. Wilkinson, Univ. of Glasgow (United Kingdom)
C.M. Sotomayor Torres, Bergische Univ. Gesamthochschule Wuppertal (United Kingdom)
W. X. Ni, Linkoeping Univ. (Sweden)
Jens Birch, Linköping Univ. (Sweden)
J. B. Joelsson, Linkoeping Univ. (Sweden)
Goeran V. Hansson, Linkoeping Univ. (Sweden)
A. Kvick, European Synchrotron Radiation Facility (France)
K. L. Wang, University of California/Los Angeles (United States)


Published in SPIE Proceedings Vol. 3007:
Silicon-Based Monolithic and Hybrid Optoelectronic Devices
Derek C. Houghton; Bahram Jalali, Editor(s)

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