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Proceedings Paper

Ge1-xCx/Si heterojunction photodiode
Author(s): Xiaoping Shao; Sean L. Rommel; Bradley A. Orner; H. Feng; Michael W. Dashiell; James Kolodzey; Paul Raymond Berger
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Paper Abstract

We report on the fabrication and characterization of a photodiode made from a heterojunction of epitaxial p-type Ge1-xCx on an n-type Si substrate. Epitaxial Ge1-xCx layers with carbon percentages of 0.2, 0.8, 1.4 and 2% were grown on (100) Si substrates by solid source molecular beam epitaxy. The p-GeC/n-Si junction exhibits diode rectification with low reverse saturation current (2 at -1 volt) and high reverse breakdown voltage in excess of -40 volts. Despite the large number of dislocations and defects at the heterojunction, photoresponsivity was observed from the p- Ge1-xCx/n-Si diodes using laser excitation at a wavelength of 1.3 micrometers . External quantum efficiency was measured between 1.2 and 2.3%.

Paper Details

Date Published: 25 April 1997
PDF: 8 pages
Proc. SPIE 3007, Silicon-Based Monolithic and Hybrid Optoelectronic Devices, (25 April 1997); doi: 10.1117/12.273850
Show Author Affiliations
Xiaoping Shao, Univ. of Delaware (United States)
Sean L. Rommel, Univ. of Delaware (United States)
Bradley A. Orner, Univ. of Delaware (United States)
H. Feng, Univ. of Delaware (United States)
Michael W. Dashiell, Univ. of Delaware (United States)
James Kolodzey, Univ. of Delaware (United States)
Paul Raymond Berger, Univ. of Delaware (United States)


Published in SPIE Proceedings Vol. 3007:
Silicon-Based Monolithic and Hybrid Optoelectronic Devices
Derek C. Houghton; Bahram Jalali, Editor(s)

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