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Proceedings Paper

Operational stability of 980-nm pump lasers at 200 mW and above
Author(s): Albert Oosenbrug; Abram Jakubowicz
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Paper Abstract

The understanding of failure mechanisms in InGaAs/AlGaAs 980 nm pump lasers has gained significantly in the last couple of years. Random failure reduction has been observed as a result of improved facet-passivation techniques, and improved packaging and chip technology. With todays wear-out extrapolation data and random-failure activation estimates, there is clearly outlook for operation at higher output- power levels (200 - 250 mW) than used so far at reasonably low random-failure rates and low failure-rate operation at lower power levels (e.g. 60 mW, 25 degree(s)C, towards 25 FIT?), which clearly stimulates the interest for application of 980 nm pumps in submarine applications.

Paper Details

Date Published: 1 May 1997
PDF: 9 pages
Proc. SPIE 3004, Fabrication, Testing, and Reliability of Semiconductor Lasers II, (1 May 1997); doi: 10.1117/12.273836
Show Author Affiliations
Albert Oosenbrug, IBM Laser Enterprise (Switzerland)
Abram Jakubowicz, IBM Laser Enterprise (Switzerland)


Published in SPIE Proceedings Vol. 3004:
Fabrication, Testing, and Reliability of Semiconductor Lasers II
Mahmoud Fallahi; S. C. Wang, Editor(s)

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