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Proceedings Paper

High-power 1.3um InGaAsP/InP lasers and amplifiers with tapered gain regions
Author(s): James N. Walpole; Gary E. Betts; Joseph P. Donnelly; Steven H. Groves
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Paper Abstract

Tapered structures fabricated in InGaAsP/InP 1.3-micrometers quantum-well material have been evaluated as lasers and as high-gain high-saturation-power amplifiers. The devices, which had a 1-mm-long ridge-waveguide gain section followed by a 2-mm-long tapered gain region, demonstrated > 1 W output power as lasers, with > 85% of the power in a central diffraction-limited lobe. The amplifiers had an unsaturated gain of 26 dB at 2.0 A and about 30 dB at 2.8 A. Saturated output power at 2.8 A was > 750 mW. At 2.0-A drive current and approximately equals 10-mW input power, the relative intensity noise of the amplified signal was <EQ -160 dB/Hz at frequencies >= 2 GHz.

Paper Details

Date Published: 2 May 1997
PDF: 8 pages
Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273818
Show Author Affiliations
James N. Walpole, MIT Lincoln Lab. (United States)
Gary E. Betts, MIT Lincoln Lab. (United States)
Joseph P. Donnelly, MIT Lincoln Lab. (United States)
Steven H. Groves, MIT Lincoln Lab. (United States)

Published in SPIE Proceedings Vol. 3001:
In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
Hong K. Choi; Peter S. Zory, Editor(s)

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