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Proceedings Paper

Theoretical performance of 3 to 4-um compressively strained InAlAsSb QW lasers
Author(s): Aleksey D. Andreev; Georgy G. Zegrya
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Paper Abstract

Threshold characteristics of compressively strained InAlAsSb 3 - 4 micrometers MQW lasers have been studied theoretically. The Auger coefficient dependence on the QW composition has been calculated. It is shown that the internal absorption decreases with strain, which results in weaker temperature dependence of the threshold carrier concentration. It is demonstrated that the strain considerably improves threshold characteristics of InAlAsSb QW laser and increases its limiting operation temperature.

Paper Details

Date Published: 2 May 1997
PDF: 13 pages
Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273807
Show Author Affiliations
Aleksey D. Andreev, A.F. Ioffe Physical-Technical Institute (Russia)
Georgy G. Zegrya, A.F. Ioffe Physical-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 3001:
In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
Hong K. Choi; Peter S. Zory, Editor(s)

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