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Proceedings Paper

Near-field optical-beam-induced current spectroscopy as a tool for analyzing aging processes in diode lasers
Author(s): Jens Wolfgang Tomm; Alexander Richter; Christoph Lienau; Thomas Elsaesser; Johann Luft
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Paper Abstract

We present a near-field optical beam induced current study of aged high power laser diode arrays (LDA). A near-field scanning optical microscope was used as a light source for creating a photocurrent or a photovoltage in the LDA. Mechanisms generating the signal as well as methodical aspects such as resolution limits and application fields of the technique are discussed. The method is demonstrated to provide insight into the microscopic aging properties of LDAs. Both monitoring of the aging status as well as the localization of defects becomes possible.

Paper Details

Date Published: 2 May 1997
PDF: 11 pages
Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273804
Show Author Affiliations
Jens Wolfgang Tomm, Max-Born-Institut (Germany)
Alexander Richter, Max-Born-Institut (Germany)
Christoph Lienau, Max-Born-Institut (Germany)
Thomas Elsaesser, Max-Born-Institut (Germany)
Johann Luft, Siemens AG (Germany)


Published in SPIE Proceedings Vol. 3001:
In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
Hong K. Choi; Peter S. Zory, Editor(s)

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