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Proceedings Paper

InAsSb-based mid-infrared lasers (3.8 to 3.9 um) and light-emitting diodes with AlAsSb claddings and semimetal electron injection grown by metal-organic chemical vapor deposition
Author(s): Andrew A. Allerman; Robert M. Biefeld; Steven R. Kurtz
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Paper Abstract

Mid-infrared (3 - 5 micrometers ) lasers and LED's are being developed for use in chemical sensor systems. As-rich, InAsSb heterostructures display unique electronic properties that are beneficial to the performance of these midwave infrared emitters. The metal-organic chemical vapor depositions growth of AlAs1-xSbx cladding layers and InAsSb/InAsP superlattice active regions are described. A regrowth technique has been used to fabricate gain-guided, injection lasers using undoped (p-type) AlAs0.16Sb0.84 for optical confinement. In device studies, we demonstrate lasers and LEDs utilizing the semi-metal properties of a p-GaAsSb/n-InAs heterojunction as a source for injection of electrons into the active region of emitters. This avoids the difficulties associated with n- type doping of AlAsSb cladding layers required for conventional p-n junction lasers and also provides a means for construction of active regions with multiple gain stages. Gain guided injected lasers employing a strained InAsSb/InAs multi-quantum well active region operated up to 210 K in pulsed mode, with an emission wavelength of 3.8 - 3.9 micrometers . A characteristic temperature of 40 K was observed to 140 K and 29 K from 140 K to 210 K. An optically pumped laser with an InAsSb/InAsP superlattice active region is also described. The maximum operating temperature of this 3.7 micrometers laser was 240 K.

Paper Details

Date Published: 2 May 1997
PDF: 8 pages
Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273803
Show Author Affiliations
Andrew A. Allerman, Sandia National Labs. (United States)
Robert M. Biefeld, Sandia National Labs. (United States)
Steven R. Kurtz, Sandia National Labs. (United States)

Published in SPIE Proceedings Vol. 3001:
In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
Hong K. Choi; Peter S. Zory, Editor(s)

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