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Proceedings Paper

GaInAsSb/AlGaAsSb diode lasers grown by organometallic vapor phase epitaxy
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Paper Abstract

GaInAsSb/AlGaAsSb multiple-quantum-well diode lasers grown by organometallic vapor phase epitaxy are reported. The laser structure consists of n- and p-doped Al0.59Ga0.41As0.05Sb0.95 cladding layer, Al0.28Ga0.72As0.02Sb0.98 confining layers, and four 15-nm- thick Ga0.87In0.13As0.12Sb0.88 quantum wells with 20-nm-thick Al0.28Ga0.72As0.02Sb0.98 barrier layers. These lasers, emitting at 2.1 micrometers , have exhibited pulsed threshold current densities as low as 1.2 kA/cm2.

Paper Details

Date Published: 2 May 1997
PDF: 6 pages
Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273802
Show Author Affiliations
Christine A. Wang, MIT Lincoln Lab. (United States)
Hong K. Choi, MIT Lincoln Lab. (United States)


Published in SPIE Proceedings Vol. 3001:
In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
Hong K. Choi; Peter S. Zory, Editor(s)

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