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Proceedings Paper

Long-wavelength IR interband cascade light-emitting diodes
Author(s): Rui Q. Yang; C.H. Thompson Lin; Stefan J. Murry; Dongxu Zhang; Shin Shem Pei; Emmanuel Dupont; Hui Chun Liu; Margaret Buchanan
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Paper Abstract

Electroluminescence in the long-wavelength (6 - 8 micrometers ) spectrum region is observed from Sb-based type-II interband cascade quantum well structures. The device structures were grown by molecular beam epitaxy on GaSb substrates and comprises many (15 for the first sample and 12 for the second sample) repeated periods of active regions separated by digitally graded multilayer injection regions. The devices have been operated at 300 K and 77 K with an output optical power up to 700 nW. The strong blue shift of the electroluminescent peak with the applied bias due to the Stark effect has also been observed.

Paper Details

Date Published: 2 May 1997
PDF: 7 pages
Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273798
Show Author Affiliations
Rui Q. Yang, Univ. of Houston (United States)
C.H. Thompson Lin, Univ. of Houston (United States)
Stefan J. Murry, Univ. of Houston (United States)
Dongxu Zhang, Univ. of Houston (United States)
Shin Shem Pei, Univ. of Houston (United States)
Emmanuel Dupont, National Research Council of Canada (Canada)
Hui Chun Liu, National Research Council of Canada (Canada)
Margaret Buchanan, National Research Council of Canada (Canada)


Published in SPIE Proceedings Vol. 3001:
In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
Hong K. Choi; Peter S. Zory, Editor(s)

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