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Proceedings Paper

Temperature, stress, disorder, and crystallization effects in laser diodes: measurements and impacts
Author(s): Peter W. Epperlein
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Paper Abstract

This paper reviews extensive Raman scattering, reflectance modulation and luminescence microprobe measurements made on GaInP/AlGaInP, GaAs/AlGaAs and InGaAs/AlGaAs ridge quantum well lasers to investigate (1) laser operating temperatures, (2) built-in mechanical stress, (3) atomic disorder in mirror facets, (4) Si recrystallization effects in mirror coatings, and (5) correlations of these parameters with laser performance and reliability data.

Paper Details

Date Published: 2 May 1997
PDF: 16 pages
Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273793
Show Author Affiliations
Peter W. Epperlein, IBM Zurich Research Lab. (Switzerland)

Published in SPIE Proceedings Vol. 3001:
In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
Hong K. Choi; Peter S. Zory, Editor(s)

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