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Proceedings Paper

Temperature insensitivity of the Al-free InGaAsP lasers for =808 and 980 nm
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Paper Abstract

In this work, we present our recent achievements for the reliability of the Al-free lasers at high temperatures and high powers. Laser operations up to 30,000 hours were achieved without any degradation in the lasers characteristics from 7 randomly selected InGaAsP/GaAs diodes for (lambda) equals 808 nm. The test were performed for lasers without mirror-coating for optical power of 0.5 to 1 W CW at 50 approximately 60 degree(s)C. To the best of our knowledge, this is the first direct demonstration of the extremely high reliability of Al-free diodes operations at high powers and temperatures for periods of time much longer than practical need (approximately 3 years). The characteristics during the tests are discussed in detail.

Paper Details

Date Published: 2 May 1997
PDF: 11 pages
Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273792
Show Author Affiliations
Manijeh Razeghi, Northwestern Univ. (United States)
Hyuk Jong Yi, Northwestern Univ. (United States)
Jacqueline E. Diaz, Northwestern Univ. (United States)
Seongsin Kim, Northwestern Univ. (United States)
Matthew Erdtmann, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 3001:
In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
Hong K. Choi; Peter S. Zory, Editor(s)

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