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Proceedings Paper

Performance of ridge-guide AlGaInAs lasers
Author(s): Jieh-Ping Sih; T. M. Chou; Jay B. Kirk; Jerome K. Butler; Gary A. Evans; A. R. Mantie; Jack Koscinski; Richard K. DeFreez
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Paper Abstract

AlGaInAs semiconductor lasers operating at a wavelength of 1.3 micrometers show superior performance compared to InGaAsP lasers. Ridge guide lasers are fabricated from both material systems by the same process. The characteristic temperature To for the AlGaInAs lasers (approximately 100 degree(s)K) is about twice that of the InGaAsP lasers (approximately 50 degree(s)K) resulting in substantially lower thresholds (approximately 34 mA compared to approximately 56 mA) at 85 degree(s)C. The 3-dB modulation frequency of AlGaInAs lasers is about 25% higher than that of the InGaAsP lasers.

Paper Details

Date Published: 2 May 1997
PDF: 8 pages
Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273791
Show Author Affiliations
Jieh-Ping Sih, Southern Methodist Univ. (United States)
T. M. Chou, Southern Methodist Univ. (United States)
Jay B. Kirk, Southern Methodist Univ. (United States)
Jerome K. Butler, Southern Methodist Univ. (United States)
Gary A. Evans, Southern Methodist Univ. (United States)
A. R. Mantie, Laser Diode, Inc. (United States)
Jack Koscinski, Laser Diode, Inc. (United States)
Richard K. DeFreez, Linfield Research Institute (United States)


Published in SPIE Proceedings Vol. 3001:
In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
Hong K. Choi; Peter S. Zory, Editor(s)

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