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Proceedings Paper

New approach to blue-shifting asymmetric quantum wells
Author(s): Craig Cooper; Peter Blood; Catherine H. Molloy; Xiaoyuan Chen; David I. Westwood; Peter M. Smowton; David Somerford
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Paper Abstract

Asymmetric quantum wells which exhibit a blue-shift in their transition energy with increasing optical pump intensity are of interest for use in a variety of optoelectronic devices. The blue-shift is usually achieved by the piezoelectric effect in quantum wells which are grown to be mismatched with respect to a substrate cut on a polar orientation, usually (111) GaAs. The internal piezoelectric field produces a triangular-shaped well which flattens-out as carriers are injected and screen the field. We have overcome a number of difficulties in this approach by generating the internal field in structures grown on (100) substrates by introducing delta-doping layers of opposite type at the well-barrier interface at each side of the well. In this paper we present details of the electro-optical properties of both kinds of structure and we show that the delta-doped structures exhibit similar blue-shifts to their (111) counterparts. We show that both structures produce laser action under injection from a p-n junction.

Paper Details

Date Published: 2 May 1997
PDF: 8 pages
Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273787
Show Author Affiliations
Craig Cooper, Univ. of Wales College Cardiff (United Kingdom)
Peter Blood, Univ. of Wales College Cardiff (United Kingdom)
Catherine H. Molloy, Univ. of Wales College Cardiff (United Kingdom)
Xiaoyuan Chen, Univ. of Iowa (United States)
David I. Westwood, Univ. of Wales College Cardiff (United Kingdom)
Peter M. Smowton, Univ. of Wales College Cardiff (United Kingdom)
David Somerford, Univ. of Wales College Cardiff (United Kingdom)


Published in SPIE Proceedings Vol. 3001:
In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
Hong K. Choi; Peter S. Zory, Editor(s)

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