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Proceedings Paper

High-power InGaAs(P)/InGa(Al)P/GaAs semiconductor diode lasers
Author(s): Luke J. Mawst; Dan Botez
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Paper Abstract

Al-free active-region, 100 micrometers -stripe lasers operating at a wavelength of 0.98 micrometers (0.81 micrometers ), provide high CW powers: 8W (5W) and `wallplug' efficiencies: 66% (45%). At 0.81 micrometers , the devices are potentially twice as reliable as Al-containing active-layer devices.

Paper Details

Date Published: 2 May 1997
PDF: 6 pages
Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273784
Show Author Affiliations
Luke J. Mawst, Univ. of Wisconsin/Madison (United States)
Dan Botez, Univ. of Wisconsin/Madison (United States)


Published in SPIE Proceedings Vol. 3001:
In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
Hong K. Choi; Peter S. Zory, Editor(s)

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