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Proceedings Paper

Progress in development of a monolithic 680-nm MOPA
Author(s): Bardia Pezeshki; Jules S. Osinski; Hanmin Zhao; Atul Mathur
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Paper Abstract

The various components for red MOPAs (Master Oscillator Power Amplifier) have been demonstrated and exhibit excellent performance. A major impediment has been the regrowth over material with high aluminum concentration, necessary for short wavelength operation. Nevertheless, amplifiers, DFB, and DBR lasers have been demonstrated in discrete form. Single frequency DBR and DFB lasers using a buried diffraction grating emit over 20 mW with efficiencies of up to 0.4 W/A. The DBR can be tuned over 3 nm using current injection in the grating, and preliminary lifetests indicate good reliability. Discrete flared amplifiers exhibited nearly 1.6 W pulsed, and 500 mW CW output power. The performance of the individual devices and integration issues in developing the MOPA will be discussed.

Paper Details

Date Published: 2 May 1997
PDF: 5 pages
Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273780
Show Author Affiliations
Bardia Pezeshki, SDL, Inc. (United States)
Jules S. Osinski, SDL, Inc. (United States)
Hanmin Zhao, SDL, Inc. (United States)
Atul Mathur, SDL, Inc. (United States)

Published in SPIE Proceedings Vol. 3001:
In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
Hong K. Choi; Peter S. Zory, Editor(s)

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