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Proceedings Paper

Theory of InGaN multiquantum well laser diodes
Author(s): Georgy G. Zegrya
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Paper Abstract

The present work is concerned with threshold characteristics of InGaN multi-quantum well laser diodes. The threshold current is analyzed in detail as a function of quantum well parameters and temperature. The laser structure is optimized to improve its threshold characteristics and increase the maximum radiation power.

Paper Details

Date Published: 2 May 1997
PDF: 11 pages
Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273779
Show Author Affiliations
Georgy G. Zegrya, A.F. Ioffe Physical-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 3001:
In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
Hong K. Choi; Peter S. Zory, Editor(s)

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