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Proceedings Paper

High-power laser diodes at various wavelengths
Author(s): Mark A. Emanuel; Jay A. Skidmore; Raymond J. Beach
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Paper Abstract

High power laser diodes at various wavelengths are described. First, performance and reliability of an optimized large transverse mode diode structure at 808 and 941 nm are presented. Next, data are presented on a 9.5 kW peak power array at 900 nm having a narrow emission bandwidth suitable for pumping Yb:S-FAP laser materials. Finally, results on a fiber-coupled laser diode array at approximately 730 nm are presented.

Paper Details

Date Published: 2 May 1997
PDF: 5 pages
Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273775
Show Author Affiliations
Mark A. Emanuel, Lawrence Livermore National Lab. (United States)
Jay A. Skidmore, Lawrence Livermore National Lab. (United States)
Raymond J. Beach, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 3001:
In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
Hong K. Choi; Peter S. Zory, Editor(s)

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