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Proceedings Paper

XPS study of laser-assisted etching of InP in a chlorine atmosphere
Author(s): Jerzy M. Wrobel; Christopher E. Moffitt; David M. Wieliczka; Jan J. Dubowski
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Paper Abstract

Laser assisted dry etching ablation of (001) InP wafers in a chlorine atmosphere is studied with spatially resolved x-ray photoelectron spectroscopy (XPS). The etching was carried out in a low pressure mixture of chlorine and helium (10% Cl2 in He). The wafers were exposed to 308 nm pulsed XeCl excimer laser radiation with several values of fluence near the ablation threshold of InP. It was found that, at room temperature, the applied etch mixture does not spontaneously react with the wafer. It was also found that laser irradiation at a fluence less than the ablation threshold of InP stimulates a chemical reaction between the chlorine and the wafer, forming In-Cl compounds. At the same time, the irradiation removes the reaction products.

Paper Details

Date Published: 9 May 1997
PDF: 10 pages
Proc. SPIE 2991, Laser Applications in Microelectronic and Optoelectronic Manufacturing II, (9 May 1997); doi: 10.1117/12.273743
Show Author Affiliations
Jerzy M. Wrobel, Univ. of Missouri/Kansas City (United States)
Christopher E. Moffitt, Univ. of Missouri/Kansas City (United States)
David M. Wieliczka, Univ. of Missouri/Kansas City (United States)
Jan J. Dubowski, National Research Council of Canada (Canada)


Published in SPIE Proceedings Vol. 2991:
Laser Applications in Microelectronic and Optoelectronic Manufacturing II
Jan J. Dubowski, Editor(s)

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