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Proceedings Paper

Photochemical reactions in silicon nitride with ArF excimer laser
Author(s): Kou Kurosawa; Peter R. Herman; Yasuo Takigawa; Akihiro Kameyama; Atsushi Yokotani; Wataru Sasaki
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Paper Abstract

Exposure of silicon nitride to above-bandgap 6.5-eV photons from an ArF excimer laser drives both the dissociation of silicon-nitrogen bonds and the desorption of nitrogen atoms and/or molecules over a wide fluence range. Crystalline silicon precipitates are also generated on laser exposed surfaces, however, only for fluences exceeding 0.2 J/cm2. The rates of nitrogen desorption and the concentration of silicon precipitation were found to depend strongly on laser fluence, rising rapidly above 0.2 J/cm2, and saturating at approximately 0.5 J/cm2. This saturation was also observed in the thickness of the silicon precipitate layer, which peaked at 35 nm depth for fluences greater than 0.5 J/cm2. Such saturation phenomena can be explained by the onset of laser ablation at approximately 0.5 J/cm2 fluence which removes material in the laser affected zone. The formation of silicon precipitates is discussed in the context of photochemical reactions that follow band-to-band electronic transitions.

Paper Details

Date Published: 9 May 1997
PDF: 7 pages
Proc. SPIE 2991, Laser Applications in Microelectronic and Optoelectronic Manufacturing II, (9 May 1997); doi: 10.1117/12.273742
Show Author Affiliations
Kou Kurosawa, Univ. of Toronto (Canada) and Univ. of Miyazaki (Japan)
Peter R. Herman, Univ. of Toronto (Canada)
Yasuo Takigawa, Osaka Electro-Communication Univ. (Japan)
Akihiro Kameyama, Univ. of Miyazaki (Japan)
Atsushi Yokotani, Univ. of Miyazaki (Japan)
Wataru Sasaki, Univ. of Miyazaki (Japan)


Published in SPIE Proceedings Vol. 2991:
Laser Applications in Microelectronic and Optoelectronic Manufacturing II
Jan J. Dubowski, Editor(s)

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