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Proceedings Paper

Formation of Ti:sapphire thin films on single-crystal sapphire and GaAs substrates by pulsed laser deposition
Author(s): Peter A. Atanasov; Rumen I. Tomov; Zahari Y. Peshev; Anna O. Dikovska; Vassilka N. Tzaneva
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Paper Abstract

The results of pulsed laser deposition of Ti-doped and undoped sapphire ((alpha) -Al2O3) thin films are presented. Three types of doped targets are utilized -- monocrystalline and two different ceramics synthesized in vacuum and H2 ambient, respectively. The doping procedure is related with the potential application of the Ti:sapphire thin films as planar tunable laser media. The influence of the target's type upon the film quality is studied. The films are characterized by XRD, RHEED, and SEM analyses. The optical emission measurements of the laser induced plasma plume are performed.

Paper Details

Date Published: 9 May 1997
PDF: 6 pages
Proc. SPIE 2991, Laser Applications in Microelectronic and Optoelectronic Manufacturing II, (9 May 1997); doi: 10.1117/12.273735
Show Author Affiliations
Peter A. Atanasov, Institute of Electronics (Bulgaria)
Rumen I. Tomov, Institute of Electronics (Bulgaria)
Zahari Y. Peshev, Institute of Electronics (Bulgaria)
Anna O. Dikovska, Institute of Electronics (Bulgaria)
Vassilka N. Tzaneva, Institute of Electronics (Bulgaria)

Published in SPIE Proceedings Vol. 2991:
Laser Applications in Microelectronic and Optoelectronic Manufacturing II
Jan J. Dubowski, Editor(s)

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