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Proceedings Paper

Pulsed laser deposition of ferroelectric thin films for active microwave electronic devices
Author(s): James S. Horwitz; Douglas B. Chrisey; A. C. Carter; Wontae Chang; Lee A. Knauss; Jeffrey M. Pond; Steven W. Kirchoefer; D. Korn; Syen B. Qadri
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Paper Abstract

High quality thin films of SrxBa(1-x)TiO3 are currently being grown using pulsed laser deposition (PLD). These films are being used for the construction of frequency tunable microwave electronic devices. In particular, a low phase noise, voltage controlled oscillator (1.5 - 2.5 GHz) is currently being developed. Single phase and oriented SrxBa(1-x)TiO3 films have been deposited by PLD onto (100) LaAlO3 and MgO and single crystal Ag films. The dielectric properties of these films has been measured at 1 MHz and between 1 and 20 GHz. A 75% change in the capacitance can be achieved using a 40 V bias across a 5 micrometer interdigital capacitor gap (80 kV/cm). The dissipation factor (measured at 1 MHz) depends on film composition and temperature. Dielectric loss measurement at 1 - 20 GHz have shown a dielectric loss tangent as small as 1.25 multiplied by 10-2.

Paper Details

Date Published: 9 May 1997
PDF: 9 pages
Proc. SPIE 2991, Laser Applications in Microelectronic and Optoelectronic Manufacturing II, (9 May 1997); doi: 10.1117/12.273731
Show Author Affiliations
James S. Horwitz, Naval Research Lab. (United States)
Douglas B. Chrisey, Naval Research Lab. (United States)
A. C. Carter, Naval Research Lab. (United States)
Wontae Chang, Naval Research Lab. (United States)
Lee A. Knauss, Naval Research Lab. (United States)
Jeffrey M. Pond, Naval Research Lab. (United States)
Steven W. Kirchoefer, Naval Research Lab. (United States)
D. Korn, Naval Research Lab. (United States)
Syen B. Qadri, Naval Research Lab. (United States)


Published in SPIE Proceedings Vol. 2991:
Laser Applications in Microelectronic and Optoelectronic Manufacturing II
Jan J. Dubowski, Editor(s)

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