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Proceedings Paper

In-situ photoluminescence mapping of industrial IR-sensitive film structures
Author(s): Sergey C. Stafeev; Michael S. Kosyakov
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Paper Abstract

The purpose of the work is to investigate a photoluminescence of GaAs-photocathodes at various stages of manufacturing depending on illumination method and spectral range of radiation, but also to obtain 2-dimensional spatial distributions of a photoluminescence intensity, to compare them with reference and to detect features of indicated distributions. Besides with the purpose of detection and extraction such typical defects as internal cracks, pile-up of dislocations and swirl-defects some algorithms of the obtained images processing were developed and tentatively tested.

Paper Details

Date Published: 9 May 1997
PDF: 6 pages
Proc. SPIE 2991, Laser Applications in Microelectronic and Optoelectronic Manufacturing II, (9 May 1997); doi: 10.1117/12.273720
Show Author Affiliations
Sergey C. Stafeev, St. Petersburg Institute of Fine Mechanics and Optics (Russia)
Michael S. Kosyakov, St. Petersburg Institute of Fine Mechanics and Optics (Russia)


Published in SPIE Proceedings Vol. 2991:
Laser Applications in Microelectronic and Optoelectronic Manufacturing II
Jan J. Dubowski, Editor(s)

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