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Proceedings Paper

Comparative study of laser- and ion implantation-induced quantum well intermixing in GaInAsP/InP microstructures
Author(s): Jan J. Dubowski; N. Sylvain Charbonneau; Alain P. Roth; Philip J. Poole; Charles Lacelle; Margaret Buchanan; Ian V. Mitchell; Richard D. Goldberg
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Paper Abstract

Laser-induced quantum well intermixing (laser-QWI) and ion implantation-induced quantum well intermixing (II-QWI) techniques have been studied to selectively modify the optical properties of GaInAsP/InP laser microstructures. Following the annealing with a cw Nd:YAG laser, a blue shift in the quantum well photoluminescence of up to 124 nm was observed for samples annealed up to 4 min. A comparison of the laser annealing results with those of II-QWI, which were obtained for the same GaInAsP/InP microstructure, indicates that laser- QWI yields material with comparable, or better optical properties. The one-step processing used in the laser-QWI approach makes it an attractive alternative in fabricating photonic integrated circuits at low cost.

Paper Details

Date Published: 9 May 1997
PDF: 6 pages
Proc. SPIE 2991, Laser Applications in Microelectronic and Optoelectronic Manufacturing II, (9 May 1997); doi: 10.1117/12.273717
Show Author Affiliations
Jan J. Dubowski, National Research Council of Canada (Canada)
N. Sylvain Charbonneau, National Research Council of Canada (Canada)
Alain P. Roth, National Research Council of Canada (Canada)
Philip J. Poole, National Research Council of Canada (Canada)
Charles Lacelle, National Research Council of Canada (Canada)
Margaret Buchanan, National Research Council of Canada (Canada)
Ian V. Mitchell, Univ. of Western Ontario (Canada)
Richard D. Goldberg, Univ. of Western Ontario (Canada)


Published in SPIE Proceedings Vol. 2991:
Laser Applications in Microelectronic and Optoelectronic Manufacturing II
Jan J. Dubowski, Editor(s)

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