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Proceedings Paper

Si photoepitaxy induced by synchrotron radiation
Author(s): Yuichi Utsumi
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Paper Abstract

Epitaxial Si films are grown on Si substrates by synchrotron radiation-excited gas-source molecular beam epitaxy (MBE) using disilane. It is demonstrated that the epitaxial temperature is lowered to 40 degrees Celsius. Selective epitaxial growth between Si/SiO2 substrate can be achieved irrespective of growth time at temperatures above 700 degrees Celsius. For the B doping using disilane/decaborane, it is confirmed that SR irradiation significantly decreases the doping temperatue (80 degrees Celsius) and electrical activation rate.

Paper Details

Date Published: 9 May 1997
PDF: 12 pages
Proc. SPIE 2991, Laser Applications in Microelectronic and Optoelectronic Manufacturing II, (9 May 1997); doi: 10.1117/12.273714
Show Author Affiliations
Yuichi Utsumi, NTT System Electronics Labs. (Japan)


Published in SPIE Proceedings Vol. 2991:
Laser Applications in Microelectronic and Optoelectronic Manufacturing II
Jan J. Dubowski, Editor(s)

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