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Proceedings Paper

Trial manufacturing results and characteristics of InGaAs-quadrant detectors (QD) as a fine pointing sensor
Author(s): Tomohiro Araki; Mamoru Furuya; Yasumasa Hisada
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Paper Abstract

We would like to report our research and development on InGaAs-QD as a part of our research on optical inter-orbit communication technology. Optical transmitter subsystems using Erbium doped fiber amplifier (EDFA, wavelength 1550nm) and Neodymium doped fiber amplifier (NDFA, wavelength 1060nm) have been candidate subsystems of future optical-IOC system. However, present fine pointing sensors, such as Si- QD and Si-CCD, have little sensitivity at 1060nm, and no sensitivity at wavelengths longer than 1100nm. There is a need for a fine pointing sensor that has a high sensitivity at 1060nm and 1550 nm. Thus, we tried to manufacture InGaAs- pin-QD, adding optical surface separation processes into conventional production processes of commercially available InGaAs-pin-PD. InGaAs-QD with high sensitivity and low dark current was produced. Our analysis shows that these devices are suitable as a fine pointing sensor of optical-IOC systems using EDFA or NDFA as a transmitter subsystem.

Paper Details

Date Published: 24 April 1997
PDF: 6 pages
Proc. SPIE 2990, Free-Space Laser Communication Technologies IX, (24 April 1997); doi: 10.1117/12.273692
Show Author Affiliations
Tomohiro Araki, National Space Development Agency (Japan)
Mamoru Furuya, National Space Development Agency (Japan)
Yasumasa Hisada, National Space Development Agency (Japan)


Published in SPIE Proceedings Vol. 2990:
Free-Space Laser Communication Technologies IX
G. Stephen Mecherle, Editor(s)

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