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Proceedings Paper

MOSFET solid state switching circuit improves the 0 to 99% rise time for framing camera deflection electronics
Author(s): Anthony T. Rivera; Stan W. Thomas
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Paper Abstract

We have improved the 0 to 99% rise time voltage on our 2 frame deflection plates from 160 nS to 65 nS with the addition of a peaking circuit that works in conjunction with our primary 2 frame deflection circuitry. Our peaking technique has applications to other HV pulsers including those which must drive 51 ohm loads. Generally, rise time voltages are measured between 10 and 90%. To minimize the camera image blur resulting from the dynamic influence of deflection plate potentials acting on photocathode electrons, it was necessary to design a circuit that would rise from 0 to the 99% voltage level in under 100 nS. Once this voltage was reached, it was necessary to stay within 1% of the attained voltage level for a duration of 1 uS. This was accomplished with the use of MOSFET solid state switching.

Paper Details

Date Published: 28 May 1997
PDF: 3 pages
Proc. SPIE 2869, 22nd International Congress on High-Speed Photography and Photonics, (28 May 1997); doi: 10.1117/12.273477
Show Author Affiliations
Anthony T. Rivera, Lawrence Livermore National Lab. (United States)
Stan W. Thomas, Lawrence Livermore National Lab. (United States)

Published in SPIE Proceedings Vol. 2869:
22nd International Congress on High-Speed Photography and Photonics
Dennis L. Paisley; ALan M. Frank, Editor(s)

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