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Proceedings Paper

Effect of matching layer on polarization photosensitivity of an AIIIBV Schottky-barrier photodetector monolithically integrated with an optical waveguide
Author(s): Nikolas L. Dmitruk; Oksana V. Fursenko; Olga I. Mayeva
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Paper Abstract

Simulation of polarization photosensitivity of Schottky- barrier waveguide photodetector to optimize layers parameters is demonstrated. The operation of polarization photosensitive detector is based on nonequivalent in light transmission through the multilayer structure interface for different polarizations. We show that insertion of a matching layer between waveguide and detector can improve the coupling in evanescently coupled, integrated waveguide photodetectors. The absorption coefficient of a InGaAs Schottky-barrier photodetector integrated with a InGaAsP-InP waveguide is analyzed. A surface plasmon-polariton waves excited in thin film semiconductor-metal structure provide selective coupling of light into semiconductor with increased quantum efficiency. By combining the selective properties of the surface electromagnetic modes with convenient photodetective device design, it can achieve polarization-, angle- and wavelength-dependent detectors. Such kind of experiment is realized by special choice of grating periodicity.

Paper Details

Date Published: 1 April 1997
PDF: 7 pages
Proc. SPIE 3094, Polarimetry and Ellipsometry, (1 April 1997); doi: 10.1117/12.271840
Show Author Affiliations
Nikolas L. Dmitruk, Institute for Physics of Semiconductors (Ukraine)
Oksana V. Fursenko, Institute for Physics of Semiconductors (Ukraine)
Olga I. Mayeva, Institute for Physics of Semiconductors (Ukraine)

Published in SPIE Proceedings Vol. 3094:
Polarimetry and Ellipsometry
Maksymilian Pluta; Tomasz R. Wolinski, Editor(s)

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