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Proceedings Paper

Practical aspects of multiple-angle ellipsometry of semiconductor structures
Author(s): Lubov A. Zabashta; Oleg I. Zabashta; Nikolas L. Dmitruk
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Paper Abstract

The potentials of multiple angle of incidence ellipsometry in determining several parameters of stratified structures are discussed. The principles of the correct formulation of the ellipsometric inverse problem are presented. We have applied Tickhonov's regularization algorithm to obtain information about a model describing the system studied. It represents the results of the numerical experiments showing the applicability and the specific feature of the developed algorithm. The experimental results are presented.

Paper Details

Date Published: 1 April 1997
PDF: 6 pages
Proc. SPIE 3094, Polarimetry and Ellipsometry, (1 April 1997); doi: 10.1117/12.271836
Show Author Affiliations
Lubov A. Zabashta, Sumy State Univ. (Ukraine)
Oleg I. Zabashta, Institute of Applied Physics (Ukraine)
Nikolas L. Dmitruk, Institute of Semiconductor Physics (Ukraine)

Published in SPIE Proceedings Vol. 3094:
Polarimetry and Ellipsometry
Maksymilian Pluta; Tomasz R. Wolinski, Editor(s)

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