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Proceedings Paper

Ellipsometric studies of the effect of a metal island structure on the optic properties of a semiconductor surface
Author(s): Nikolas L. Dmitruk; Lubov A. Zabashta
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Paper Abstract

The ellipsometry method is used to study the optic properties of the real gold-doped gallium arsenide surface. The ellipsometric angles (Psi) and (Delta) were measured with the LEF-3M laser ellipsometer in the range of angles (curly phi) equals 45 degrees-85 degrees to an accuracy 0.5. The optical constants and the interfacial layer thickness were calculated using the ELLA application package. The structure model proposed for the metal-doped gallium arsenide surface takes into account the specific deposition of the dopant and the dopant distribution over the surface. The ellipsometry data are compared with those obtained by electron microscopy. The ellipsometry method is shown to be useful in the estimation of the degree of coating and the doped surface morphology.

Paper Details

Date Published: 1 April 1997
PDF: 5 pages
Proc. SPIE 3094, Polarimetry and Ellipsometry, (1 April 1997); doi: 10.1117/12.271835
Show Author Affiliations
Nikolas L. Dmitruk, Institute of Semiconductor Physics (Ukraine)
Lubov A. Zabashta, Sumy State Univ. (Ukraine)


Published in SPIE Proceedings Vol. 3094:
Polarimetry and Ellipsometry

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