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Proceedings Paper

Determination of the optical model of the MOS structure with spectroscopic ellipsometry
Author(s): Andrzej Kudla; Danuta Brzezinska; Thomas Wagner; Zbigniew Sawicki
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Paper Abstract

The internal photo injection phenomena in a semitransparent gate metal-oxide-semiconductor (MOS) structure were described among others by the Przewlocki formula. This formula describes the dependence between external voltage applied to the gate to get zero photoelectric current and the light absorption in both electrodes. To study optical properties of the MOS structure, ellipsometric measurements and calculations for the Al-SiO2-Si system were done using J.A. Woolam spectroscopic ellipsometer VASE. The optical model of this structure was determined and used to calculate the dependence of the voltage on the light wavelength (lambda) in Przewlocki's formula.

Paper Details

Date Published: 1 April 1997
PDF: 5 pages
Proc. SPIE 3094, Polarimetry and Ellipsometry, (1 April 1997); doi: 10.1117/12.271833
Show Author Affiliations
Andrzej Kudla, Institute of Electron Technology (Poland)
Danuta Brzezinska, Institute of Electron Technology (Poland)
Thomas Wagner, LOT-Oriel GmbH (Germany)
Zbigniew Sawicki, Institute of Electron Technology (Poland)

Published in SPIE Proceedings Vol. 3094:
Polarimetry and Ellipsometry
Maksymilian Pluta; Tomasz R. Wolinski, Editor(s)

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