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Proceedings Paper

Ellipsometric investigation of implanted GaAs
Author(s): Miroslaw Kulik
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Paper Abstract

Ellipsometric investigations of optical properties of GaAs implanted with energy in the range 50 keV to 300 keV with different ions are presented. Assuming a layer model for the implanted samples, the ellipsometric measurements are analyzed to obtain the refractive index, extinction coefficient and the thickness of dopant layers.

Paper Details

Date Published: 1 April 1997
PDF: 9 pages
Proc. SPIE 3094, Polarimetry and Ellipsometry, (1 April 1997); doi: 10.1117/12.271832
Show Author Affiliations
Miroslaw Kulik, Univ. Marie Curie-Sklodowska Lublin (Poland)


Published in SPIE Proceedings Vol. 3094:
Polarimetry and Ellipsometry
Maksymilian Pluta; Tomasz R. Wolinski, Editor(s)

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