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Proceedings Paper

Polarization characteristics of quantum-well semiconductor structures
Author(s): Ivan S. Manak; Dmitrii V. Karasev; Valerii K. Kononenko; Sergei V. Nalivko; Aleksei A. Romanenko; Aleksei A. Vitalisov
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Paper Abstract

For low-dimensional semiconductor systems, matrix elements of optical dipole transitions versus different directions of the radiation polarization vector have been analyzed in detail. Analytical and numerical calculations are performed for quantum-well heterostructures in III-V semiconductor compounds. An influence of the spectral broadening due to intrasubband relaxation of current carriers on the transformation of light emission spectra in TE and TM modes with excitation has been studied. Distributions of electromagnetic wave fields and the optical confinement factor for TE and TM modes in multiple quantum-well layer structures, including a novel type of asymmetric heterostructures, have been determined. For quantum-wire structures, including a novel type of asymmetric heterostructures, have ben determined. For quantum-wire structures, the degree of light emission polarization has been examined and effects in porous Si luminescence are explained.

Paper Details

Date Published: 1 April 1997
PDF: 16 pages
Proc. SPIE 3094, Polarimetry and Ellipsometry, (1 April 1997); doi: 10.1117/12.271798
Show Author Affiliations
Ivan S. Manak, Belorussian State Univ. (Belarus)
Dmitrii V. Karasev, B.I. Stepanov Institute of Physics (Belarus)
Valerii K. Kononenko, B.I. Stepanov Institute of Physics (Belarus)
Sergei V. Nalivko, Belorussian State Univ. (Belarus)
Aleksei A. Romanenko, Institute of Applied Optics (Belarus)
Aleksei A. Vitalisov, Belorussian State Univ. (Belarus)


Published in SPIE Proceedings Vol. 3094:
Polarimetry and Ellipsometry
Maksymilian Pluta; Tomasz R. Wolinski, Editor(s)

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