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Proceedings Paper

Laser excitation of thermal waves for remote control of Si wafers in plasma-etching process
Author(s): Alexander A. Karabutov; Viktor Vitalievitch Klevitskii; Alexander P. Kubyshkin; Vladislav Ya. Panchenko
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Paper Abstract

The method of the thickness and temperature field measurement in Si wafers is discussed. Laser excitation of thermal waves and their diffusion in depth and lateral directions are used. Thermal wave is detected by IR radiometry. The pulsed laser illumination of wafers under testing are discussed. The investigation of depth and lateral diffusion of heat processes to determine the thickness and thermal diffusivity separately. The accuracy, reliability and resolution of the method proposed are discussed.

Paper Details

Date Published: 2 April 1997
PDF: 7 pages
Proc. SPIE 3091, Laser Applications Engineering (LAE-96), (2 April 1997); doi: 10.1117/12.271779
Show Author Affiliations
Alexander A. Karabutov, Moscow State Univ. (Russia)
Viktor Vitalievitch Klevitskii, Moscow State Univ. (Russia)
Alexander P. Kubyshkin, Scientific Research Ctr. for Laser Technology (Russia)
Vladislav Ya. Panchenko, Scientific Research Ctr. for Laser Technology (Russia)


Published in SPIE Proceedings Vol. 3091:
Laser Applications Engineering (LAE-96)
Vadim P. Veiko, Editor(s)

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